Thinnest Nonvolatile Memory Based on Monolayer h‐BN
نویسندگان
چکیده
منابع مشابه
Nonvolatile memory cells based on MoS2/graphene heterostructures.
Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor ...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2019
ISSN: 0935-9648,1521-4095
DOI: 10.1002/adma.201806790